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| 型号： | MSP430G2453IPW28R |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PDSO28 |
| 封装： | GREEN, PLASTIC, TSSOP-28 |
| 文件页数： | 33/68页 |
| 文件大小： | 858K |
| 代理商： | MSP430G2453IPW28R |
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MSP430G2x53
MSP430G2x13
SLAS735C
– APRIL 2011 – REVISED AUGUST 2011
10-Bit ADC, Temperature Sensor and Built-In VMID (MSP430G2x53 Only)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
Temperature sensor supply
REFON = 0, INCHx = 0Ah,
ISENSOR
3 V
60
A
current(1)
TA = 25°C
TCSENSOR
ADC10ON = 1, INCHx = 0Ah (2)
3 V
3.55
mV/
°C
Sample time required if channel
ADC10ON = 1, INCHx = 0Ah,
tSensor(sample)
3 V
30
s
10 is selected (3)
Error of conversion result
≤ 1 LSB
IVMID
Current into divider at channel 11
ADC10ON = 1, INCHx = 0Bh
3 V
(4)
A
ADC10ON = 1, INCHx = 0Bh,
VMID
VCC divider at channel 11
3 V
1.5
V
VMID 0.5 × VCC
Sample time required if channel
ADC10ON = 1, INCHx = 0Bh,
tVMID(sample)
3 V
1220
ns
11 is selected (5)
Error of conversion result
≤ 1 LSB
(1)
The sensor current ISENSOR is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is
high). When REFON = 1, ISENSOR is included in IREF+. When REFON = 0, ISENSOR applies during conversion of the temperature sensor
input (INCH = 0Ah).
(2)
The following formula can be used to calculate the temperature sensor output voltage:
VSensor,typ = TCSensor (273 + T [°C] ) + VOffset,sensor [mV] or
VSensor,typ = TCSensor T [°C] + VSensor(TA = 0°C) [mV]
(3)
The typical equivalent impedance of the sensor is 51 k
. The sample time required includes the sensor-on time tSENSOR(on).
(4)
No additional current is needed. The VMID is used during sampling.
(5)
The on-time tVMID(on) is included in the sampling time tVMID(sample); no additional on time is needed.
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
VCC
MIN
TYP
MAX
UNIT
CONDITIONS
VCC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time(1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
(2)
30
tFTG
tBlock, 0
Block program time for first byte or word
(2)
25
tFTG
Block program time for each additional byte or
tBlock, 1-63
(2)
18
tFTG
word
tBlock, End
Block program end-sequence wait time
(2)
6
tFTG
tMass Erase
Mass erase time
(2)
10593
tFTG
tSeg Erase
Segment erase time
(2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the Flash Controller
's state machine (tFTG = 1/fFTG).
Copyright
2011, Texas Instruments Incorporated
39
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