参数资料
型号: MSPSMBJ2K3.0
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: PLASTIC, SMBJ, 2 PIN
文件页数: 2/3页
文件大小: 305K
代理商: MSPSMBJ2K3.0
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
SCOTTSD A L E DIVISION
SMBJ2K3.0 thru SMBJ2K5.0
SMBG2K3.0 thru SMBG2K5.0
W
.Mi
cr
os
em
i
.C
O
M
SMBG
&J2
K
3.0-5.0
ELECTRICAL CHARACTERISTICS
BREAKDOWN VOLTAGE
Minimum
V(BR)
BREAKDOWN
CURRENT
I(BR)
RATED
STANDOFF
VOLTAGE
VWM
MAX
STANDBY
CURRENT
ID @ VWM
MAX
CLAMPING
VOLTAGE
VC @ IPP
PEAK PULSE
CURRENT
IPP
TEMPERATURE
COEFFICIANT
of
V(BR)
αV(BR)
MICROSEMI
PART
NUMBER
(add SMBJ or
SMBG prefix)
V
mA
V
A
V
A
% /
oC
2K3.0
2K3.3
2K4.0
2K4.5
2K5.0
4.3
4.6
5.0
5.4
5.9
50
3.0
3.3
4.0
4.5
5.0
1500
700
400
50
5
5.4
5.8
6.3
6.6
7.6
10
+0/-0.05
±0.025
±0.030
±0.040
+0.050
SYMBOLS & DEFINITIONS
Symbol
Definition
Symbol
Definition
VWM
Working Peak (Standoff) Voltage
IPP
Peak Pulse Current
PPP
Peak Pulse Power
VC
Clamping Voltage
V(BR)
Breakdown Voltage
I(BR)
Breakdown Current for V(BR)
ID
Standby Current
GRAPHS
P
PP
Peak
Pulse
Po
w
er
kW
tw – Pulse Width -
s
Test waveform parmeters: tr=8
s, tp=20 s
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
Pulse Waveform for
8/20 s Exponential Surge
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2002
5-28-2004 REV F
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