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参数资料
| 型号： | MSPUPS1040CTE3 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 40 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, POWERMITE3, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 283K |
| 代理商： | MSPUPS1040CTE3 |
UPS1040CTe3
10 A Dual Schottky Barrier Rectifiers
WWW
.Microse
m
i
.CO
M
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Forward Voltage (Note 1)
Per Element
VF
IF = 5 A , TJ =25 C
IF = 5 A , TJ =100 C
IF = 10 A , TJ =25 C
IF = 10 A , TJ =100 C
0.44
0.39
0.51
0.50
0.48
0.42
0.57
0.55
V
40
Reverse Breakdown Voltage
(Note 1)
VBR
IR = 500 uA
V
Microsemi
Copyright
2005
5/17/2005 Rev B
UU
PP
SS
11
00
44
00
CC
TT
ee33
Note: 1 Short duration test pulse used to minimize self-heating effect
GRAPHS
Reverse Current (Note1)
Per Element
IR
VR = 35V, Tj = 25 C
VR = 35V, Tj =100 C
VR = 17.5V, Tj = 25 C
VR = 17.5V, Tj = 100 C
35
4
15
2
150
10
80
5
uA
mA
uA
mA
Capacitance Per Element
CT
VR = 4 V; f = 1 MHZ
375
pF
Page 2
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