参数资料
型号: MSPUPS5819E3TR7
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, SILICON, SIGNAL DIODE, DO-216AA
封装: ROHS COMPLIANT, PLASTIC, POWERMITE 1, DO-216, 2 PIN
文件页数: 2/4页
文件大小: 322K
代理商: MSPUPS5819E3TR7
POWERMITE 1 SURFACE MOUNT
1 AMP 20 and 40 V SCHOTTKY RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
UPS5817e3 and UPS5819e3
UPS581
7e3
&
UPS581
9e3
ELECTRICAL CHARACTERISTICS (TA=25oC unless noted)
Working
Peak
Reverse
Voltage
Maximum Forward Voltage
Maximum
Reverse Current
IR @ VRWM
Typical Junction
Capacitance @
VR = 5.0 V
VRWM
VF @
0.1A
VF @
1A
VF @ 3A
IR
CJ
Part
Number
Volts
mA
pF
UPS5817e3
20
0.36
0.45
0.65
1
105
UPS5819e3
40
0.39
0.55
0.85
1
60
CHARTS AND GRAPHS
Microsemi
Scottsdale Division
Page 2
Copyright
2005
8-15-05 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料
PDF描述
MSPUPS5819E3 1 A, SILICON, SIGNAL DIODE, DO-216AA
MSPUPTB5TR7E3 100 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
MSPUPTB5E3 100 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
MQUPTB5E3 100 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
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