参数资料
| 型号： | MSQA6V1W5T2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY QUAD ESD 6.6V SOT353 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 10 |
| 电压 - 反向隔离（标准值）： | 3V |
| 电压 - 击穿： | 6.1V |
| 功率（瓦特）： | 150W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP（5 引线），SC-88A，SOT-353 |
| 供应商设备封装： | SOT-353 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MSQA6V1W5T2OSCT |
MSQA6V1W5T2G, SZMSQA6V1W5T2G
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 m s
@T A ? 25 ? C (Note 1)
Steady State Power ? 1 Diode (Note 2)
Thermal Resistance
Junction ? to ? Ambient
Above 25 ? C, Derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
ESD Discharge
MIL STD 883C ? Method 3015 ? 6
IEC1000 ? 4 ? 2, Air Discharge
IEC1000 ? 4 ? 2, Contact Discharge
Lead Solder Temperature (10 s duration)
Symbol
P pk
P D
R q JA
T Jmax
T J T stg
V PP
T L
Value
150
385
325
3.1
150
? 55 to +150
16
16
9
260
Unit
W
mW
? C/W
mW/ ? C
? C
? C
kV
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non ? repetitive current per Figure 5. Derate per Figure 10.
2. Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR ? 4 board with min pad.
See Application Note AND8308/D for further description of survivability specs.
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
I
Symbol
I PP
V C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
I F
I R V F
V RWM
I R
V BR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
I F
Test Current
Forward Current
V F
P pk
C
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
Device*
V BR @ 1 mA (Vo)
(Note 3)
Min Nom Max
Leakage Current
I RM @ V RWM = 3 V
( m A)
Capacitance
@ 0 V Bias
(pF)
Max
V F @ I F = 200
mA
(V)
V C
Per IEC61000 ? 4 ? 2
(Note 4)
MSQA6V1W5T2G
6.1
6.6
7.2
1.0
90
1.25
Figures 1 and 2
See Below
3. V BR is measured with a pulse test current I T at an ambient temperature of 25 ? C.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
*Include SZ-prefix devices where applicable.
http://onsemi.com
2
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