参数资料
型号: MSS1P2L-M3/89A
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 86K
描述: DIODE SCHOTTKY 1A 20V MICROSMP
产品目录绘图: MicroSMP Top
标准包装: 1
系列: eSMP™
二极管类型: 肖特基
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 250µA @ 20V
安装类型: 表面贴装
封装/外壳: MicroSMP
供应商设备封装: MicroSMP
包装: 标准包装
产品目录页面: 1658 (CN2011-ZH PDF)
其它名称: MSS1P2L-M3/89AGIDKR
‘? I MSS1 P2L, MSS1 P3L7 www'V'Shay'C°m Vishay General Semiconductor
THERMAL cHARAcTE s s otherwise noted)
PARAMETER
Typical thermal resistance
N atell) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas RQJL is measured
at the terminal of cathode band. RQJC is measured at the top center of the body
UNIT WEIGHT (9) PREFERRED PACKAGE CODE DELIVERY MODE 7" diameter plastic tape and reel
7" diameter plastic tape and reel
Note
ll) Automotive gradeRATINGS AND cHARAcTERIsTIcs cuRvEs
(TA : 25 °C unless otherwise noted)
I0
01
Instantaneous Forward Current (A)
Average Fon?ard Rectified Current (A)
0.01
0 25 50 75 I00 I25 I50 0 0.1 0.2 0.3 0.4 0.5 0.6 0 7 0.5
Lead Temperature (ac) Instantaneous Forward Voltage (V)Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics
I00
:3.0
Average Power Loss (W)
0.01
Instantaneous Fleverse Current (mA)
0 0.2 0.4 0.6 0 a I 0 ‘.2Average Forward Current (A) Percent ol Rated Peak Reverse Voltage (%)
Fig. 2 - Fonlvard Power Loss Characteristics Fig. 4 - Typical Reverse Characteristics
Revision: 25-Jul-13 2 Document Number: 89020
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiQdesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIsha . om doc?9100
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