参数资料
型号: MSS1P3-E3/89A
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 30 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN
文件页数: 1/4页
文件大小: 103K
代理商: MSS1P3-E3/89A
New Product
MSS1P3 & MSS1P4
Vishay General Semiconductor
Document Number: 89019
Revision: 04-Aug-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 0.68 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Halogen-free
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test
Polarity: Color band denotes the cathode end
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
30 V, 40 V
IFSM
25 A
VF at IF = 1.0 A
0.41 V
TJ max.
150 °C
Top View
Bottom View
MicroSMP
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MSS1P3
MSS1P4
UNIT
Device marking code
13
14
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
25
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料
PDF描述
MSS1P3L-G3/89A 1 A, 30 V, SILICON, SIGNAL DIODE
MSS1P5 1 A, 50 V, SILICON, SIGNAL DIODE
MSS1P6-G3/89A 1 A, 60 V, SILICON, SIGNAL DIODE
MSS1P6-E3/89A 1 A, 60 V, SILICON, SIGNAL DIODE
MSS2P2-M3/89A 2 A, 20 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
MSS1P3HM3/89A 制造商:Vishay Semiconductors 功能描述:1A,30V,SM SCHOTTKY RECT.
MSS1P3L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifiers
MSS1P3L-E3/89A 功能描述:肖特基二极管与整流器 1.0 Amp 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MSS1P3LHM3/89A 制造商:Vishay Semiconductors 功能描述:1A,30V,SM SCHOTTKY RECT.
MSS1P3LM3/89A 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R 制造商:Vishay 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R