- 您现在的位置：买卖IC网 > PDF目录53842 > MSS1P3-G3/89A (VISHAY SEMICONDUCTORS) 1 A, 30 V, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | MSS1P3-G3/89A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE |
| 封装： | GREEN, PLASTIC, MICROSMP, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 101K |
| 代理商： | MSS1P3-G3/89A |
New Product
MSS1P3 & MSS1P4
Vishay General Semiconductor
Document Number: 89019
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
10
1
0.1
0.01
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
100
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
0.001
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
1000
100
1
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
1000
100
10
1
0.1
0.01
1
10
100
1000
t - Pulse Duration (s)
T
ransient
Ther
mal
Imped
ance
(
°C/
W
)
Junction to Ambient
0.020
(0.50)
0.043
(1.10)
0.029 (0.73)
0.025 (0.63)
0.106 (2.70)
0.091 (2.30)
0.039 (0.98)
0.031 (0.78)
0.030 (0.75)
0.022 (0.55)
0.059 (1.50)
0.043 (1.10)
0.030 (0.75)
0.022 (0.55)
0.091 (2.30)
0.083 (2.10)
0.055 (1.40)
0.047 (1.20)
0.011 (0.27)
0.005 (0.12)
0.079
(2.00)
0.032
(0.80)
0.032
(0.80)
Mounting Pad Layout
Cathode Band
MicroSMP
相关PDF资料 |
PDF描述 |
|---|---|
| MSS20,051-C15 | SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| MSS20,046-H27 | SILICON, ZERO BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MSS20,051-H27 | SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| MSS20,047-C15 | SILICON, ZERO BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| MSS20,050-H27 | SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MSS1P3HM3/89A | 制造商:Vishay Semiconductors 功能描述:1A,30V,SM SCHOTTKY RECT. |
| MSS1P3L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifiers |
| MSS1P3L-E3/89A | 功能描述:肖特基二极管与整流器 1.0 Amp 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MSS1P3LHM3/89A | 制造商:Vishay Semiconductors 功能描述:1A,30V,SM SCHOTTKY RECT. |
| MSS1P3LM3/89A | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R 制造商:Vishay 功能描述:Diode Schottky 30V 1A 2-Pin Micro SMP T/R |
发布紧急采购，3分钟左右您将得到回复。