参数资料
型号: MSS1P4-M3/89A
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 87K
描述: DIODE SCHOTTKY 1A 40V MICROSMP
产品目录绘图: MicroSMP Top
标准包装: 1
系列: eSMP™
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 550mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 40V
安装类型: 表面贴装
封装/外壳: MicroSMP
供应商设备封装: MicroSMP
包装: 标准包装
产品目录页面: 1658 (CN2011-ZH PDF)
其它名称: MSS1P4-M3/89AGIDKR
New Product
MSS1 P3, MSS1 P4 ‘?
Vishay General Semiconductor 7
THERMAL cHARAcTERIsTIcS (TA = 25 0C unless othemise noted)
PARAMETER
Typical thermal resistance
N ate‘ll Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas RHJL is measured
at the terminal of cathode band. Rene is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (9) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
Mss1P4-M3/89A mm Zai—
MSS1P4HM3/89A(‘l W T 7" diameter plastic tape and reel
Note‘ll Automotive grade
RATINGS AND cHARAcTERIsTIcs CURVES(TA : 25 °C unless otherwise noted)
12 10on
3
Instantaneous Forward Current (A)
Average FonNard Rectilied Current (A)
0 25 50 75 100 125 155 > 0 0.1 0.2 0.3 0.4 0.5 0.6 0 7 0.3 0.9 1 0
Lead Temperature (DC) Instantaneous Forward Voltage (V)Fig. 1 - Maximum Forward Current Derating Cun/e Fig. 3 - Typical Instantaneous Forward Characteristics
100
EE E 10
§ 5
4 3 1
u) 5
3 >E? g 0 1
is Te '
21') 2
5 ‘E 0 01
E
E Z
om‘ l-'
0 0.2 0.4 0 6 0 E 1.0 1.2
Average Forward Current (A) Percent of Rated Peak Reverse Voltage (°/e)
Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Reverse Characteristics
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89019
2 DiodesAmerieas@vishay.com, DiodesAs|a@vishay.eom, DiodesEuroge@vishay_com Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DEsCRiBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO sPECiFiC DIsCLAiMERs, SET FORTH AT www_vishay.com/doc?91 000
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