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参数资料
| 型号： | MSS1P5-E3/89A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 101K |
| 代理商： | MSS1P5-E3/89A |
New Product
MSS1P5 & MSS1P6
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89018
Revision: 26-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas RθJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
IF = 0.5 A
IF = 1.0 A
TJ = 25 °C
VF
0.45
0.56
-
0.68
V
IF = 0.5 A
IF = 1.0 A
TJ = 125 °C
0.40
0.52
-
0.60
Maximum reverse current (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
20
7.0
150
12
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
40
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MSS1P5
MSS1P6
UNIT
Typical thermal resistance (1)
RθJA
RθJL
RθJC
125
30
40
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MSS1P6-E3/89A
0.006
89A
4500
7" diameter plastic tape and reel
MSS1P6-G3/89A
0.006
89A
4500
7" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
A
v
er
age
F
o
rw
ard
Rectified
C
u
rr
ent
(A)
Lead Temperature (°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
Resistive or Inductive Load
T
L Measured
at the Cathode Band Terminal
Figure 2. Forward Power Loss Characteristics
0.5
0.6
0.7
0.4
0.3
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSS1P5HM3/89A | 制造商:Vishay Semiconductors 功能描述:1A,50V,SM SCHOTTKY RECT. |
| MSS1P5-M3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifiers |
| MSS1P5-M3/89A | 功能描述:肖特基二极管与整流器 1.0 Amp 50 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MSS1P6 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifiers |
| MSS1P6-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Schottky Barrier Rectifiers |
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