参数资料
型号: MSS2P3-G3/89A
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 2 A, 30 V, SILICON, RECTIFIER DIODE
封装: GREEN, PLASTIC, MICROSMP, 2 PIN
文件页数: 1/4页
文件大小: 103K
代理商: MSS2P3-G3/89A
New Product
MSS2P2 & MSS2P3
Vishay General Semiconductor
Document Number: 89054
Revision: 04-Aug-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 0.68 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Halogen-free
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test
Polarity: Color band denotes the cathode end
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
20 V, 30 V
IFSM
30 A
VF at IF = 2.0 A
0.47 V
TJ max.
150 °C
Top View
Bottom View
MicroSMP
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MSS2P2
MSS2P3
UNIT
Device marking code
22
23
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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PDF描述
MSS2P2-G3/89A 2 A, 20 V, SILICON, RECTIFIER DIODE
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相关代理商/技术参数
参数描述
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