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参数资料
| 型号： | MSS30,046-P86 |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, CASE P86, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 185K |
| 代理商： | MSS30,046-P86 |
Revision Date: 05/20/05
The Aeroex / Metelics MSS30,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of -3 dBm to +3
dBm per diode.
V
F , RD and CJ matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Description
Features
MSS30,000 Series
Low Barrier Silicon Schottky Diodes
Model
Conguration
V
F
TYP
V
BR
MIN
V
C
J
TYP / MAX
pF
R
S
TYP
R
D
MAX
F
CO
TYP
GHz
Outline
MSS30,046-C15
Single Junction
0.29
2
0.10 / 0.12
10
18
160
C15
MSS30,050-C15
Single Junction
0.27
2
0.15 / 0.18
6
15175
C15
Test
Conditions
I
F = 1
mA
I
R =
R
10 μA
V
R = 0 V
F = 1MHz
I
F = 5 mA
Chip
Electrical Specifications, T
A = 25 C
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
Power Dissipation
100 mW per junction at T
A
T = 25 C, derate
A
linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 260 C for 5 sec.
Beam Lead Pull Strength
4 grams minimum
Absolute Maximum Ratings
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