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参数资料
| 型号： | MSS30,B53-B45 |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封装： | CASE B45, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 102K |
| 代理商： | MSS30,B53-B45 |
Revision Date: 05/20/05
The Aeroex / Metelics MSS CR Series of Schottky crossover
quad diodes are fabricated on N-Type epitaxial substrates
using proprietary processes that yield the highest FCOs in the
industry. Barrier heights for LO power levels from 3 dBm to +17
dBm are available.
Available in four barrier heights
Beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Description
Features
MSS Series
Silicon Schottky Bridge Quad
k
Diodes
Beam Lead
Electrical Specifications, T
A = 25 C
Model
V
F
TYP
mV
V
BR
MIN
V
C
J
TYP / MAX
fF
NF
TYP
dB
R
D
TYP
R
D
MAX
Outline
MSS30, B46-B45
300
3
0.10 / 0.13
6
20
25
B45
MSS30, B53-B45
270
3
0.20 / 0.25
6
10
15
B45
MSS40, B46-B45
470
3
0.10 / 0.13
6
20
25
B45
MSS40, B53-B45
430
3
0.20 / 0.25
6
10
15
B45
MSS50, B46-B45
530
3
0.10 / 0.13
6
15
20
B45
MSS50, B53-B45
500
3
0.20 / 0.25
6
10
15
B45
MSS60, B46-B45
670
3
0.10 / 0.13
6
20
25
B45
MSS60, B53-B45
670
3
0.20 / 0.25
6
13
18
B45
Test
Conditions
I
F = 1 mA
I
R = 10
R
μA
V
R = 0 V
R
F = 1 MHz
I
F = 5 mA
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated V
BR
Forward Current
50 mA
Operation Temperature
-65 C to +150 C
Storage Temperature
-65 C to +150 C
Power Dissipation
100 mW per junction at T
A
T = 25 C, derate
A
linearly to zero at T
A
T = +150 C
Soldering Temperature (Packaged)
+ 260 C for 5 sec.
Beam Lead Pull Strength
4 grams minimum
相关PDF资料 |
PDF描述 |
|---|---|
| MSS40,141-H20 | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,141-E25 | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,248-B20 | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,155-B10B | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
| MSS40,455-E45 | SILICON, MEDIUM BARRIER SCHOTTKY, mm WAVE BAND, MIXER DIODE |
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