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参数资料
| 型号： | MSV34060-E28 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | KU BAND, 0.48 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | CERAMIC PACKAGE-2 |
| 文件页数： | 1/8页 |
| 文件大小： | 648K |
| 代理商： | MSV34060-E28 |
Revision Date: 10/24/05
30 V Silicon Varactor Diodes
MSV34,000, SMTD & SMTV Series
Description
The work horse of varactors these diodes are built tough with
fully passivated mesa construction and Aeroex / Metelics tri-
metallization. Featuring a nominal gamma of 0.46 these diodes
nd application in tunable lters and oscillators up to 18 GHz.
Features
0 to 30 Volt tuning voltage
Tuning ratios up to 4.7 typical
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
30 V
Forward Current
100 mA
Power Dissipation
Chip
E28, E28X, SOD323, SOT23 & 0805-2
H20, P55 & T86
250 mW at T
C = 25 °C, derate linearly to zero at TC = +200 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +150 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +200 °C
Operating Temperature
Chip
E28, E28X, SOD323, SOT23 & 0805-2
H20, P55 & T86
-65
°C to +200 °C
-65
°C to +150 °C
-65
°C to +200 °C
Storage Temperature
Same as operating temperature.
Soldering Temperature
Chip
Packaged
+320
°C for 10 seconds
+260
°C peak per JEDEC J-STD-20C
相关PDF资料 |
PDF描述 |
|---|---|
| MSV34064-0805-2 | KU BAND, 0.66 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV34064-P55 | KU BAND, 0.73 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV34064-T86 | KU BAND, 0.78 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV34067-0805-2 | KU BAND, 0.86 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MSV34067-E28X | KU BAND, 0.88 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
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