参数资料
型号: MSV34060-E28X
元件分类: 变容二极管
英文描述: KU BAND, 0.48 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
封装: CERAMIC PACKAGE-2
文件页数: 1/8页
文件大小: 648K
代理商: MSV34060-E28X
Revision Date: 10/24/05
30 V Silicon Varactor Diodes
MSV34,000, SMTD & SMTV Series
Description
The work horse of varactors these diodes are built tough with
fully passivated mesa construction and Aeroex / Metelics tri-
metallization. Featuring a nominal gamma of 0.46 these diodes
nd application in tunable lters and oscillators up to 18 GHz.
Features
0 to 30 Volt tuning voltage
Tuning ratios up to 4.7 typical
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
30 V
Forward Current
100 mA
Power Dissipation
Chip
E28, E28X, SOD323, SOT23 & 0805-2
H20, P55 & T86
250 mW at T
C = 25 °C, derate linearly to zero at TC = +200 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +150 °C
100 mW at T
A = 25 °C, derate linearly to zero at TA = +200 °C
Operating Temperature
Chip
E28, E28X, SOD323, SOT23 & 0805-2
H20, P55 & T86
-65
°C to +200 °C
-65
°C to +150 °C
-65
°C to +200 °C
Storage Temperature
Same as operating temperature.
Soldering Temperature
Chip
Packaged
+320
°C for 10 seconds
+260
°C peak per JEDEC J-STD-20C
相关PDF资料
PDF描述
MSV34069 KU BAND, 1 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
SMTV3008-SOT23 KU BAND, 8 pF, SILICON, VARIABLE CAPACITANCE DIODE
SMTD3006-SOD323 KU BAND, 6 pF, SILICON, VARIABLE CAPACITANCE DIODE
SMTV3002-SOT23 KU BAND, 2 pF, SILICON, VARIABLE CAPACITANCE DIODE
SMTV3010 L BAND, 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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