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参数资料
| 型号： | MSW2032-203-T |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | 8 X 5 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, CASE 203, 5 PIN |
| 文件页数： | 14/16页 |
| 文件大小： | 648K |
| 代理商： | MSW2032-203-T |
603-641-3800 888-641--SEMI (7364) metelics-sales@aeroflex.com www.aeroflex.com/metelics
7
SP2T PIN Diode Switches
Document DS 13162 Rev C, ECN 9791
Revision Date: 4/20/2011
Absolute Maximum Ratings @ TA = + 25 C ( Unless Otherwise Defined )
Parameter
Absolute Maximum Value
Forward Current @ J0, J1 or J2
250 mA
Reverse Voltage @ J0, J1 or J2
| -125 | V
Reverse Voltage @ B1 or B2
| -125 | V
Forward Diode Voltage
1.2 V @ 250 mA
Operating Temperature
- 65 C to +125 C
Storage Temperature
- 65 C to +150 C
Junction Temperature
+175 C
Assembly Temperature
+ 260 C for 10 Seconds
C.W. Incident Power Handling
+50 dBm @ + 85 C Case Temperature
Source & Load VSWR = 1.5 :1
( Cold Switching & Hot Switching )
Notes 1, 2
Peak Incident Power Handling
+57 @ 10 μS Pulse, 1 % Duty
Source & Load VSWR = 1.5 :1
@ + 85 C Case Temperature
( Cold Switching & Hot Switching )
Notes 1, 2
Total Dissipated RF & D.C. Power
8.0 W @ +85 C Case Temperature
( Cold Switching )
Notes 1, 2
Notes:
1.
For Hot Switching, PIN Diode Driver must Transition from Forward Bias to Reverse Bias and Reverse
Bias to Forward Bias within 100
ηS with a parallel RC spiking network at the Driver Output.
2.
Backside RF and D.C. Grounding Area of Device must be Completely Solder Attached to RF Circuit
Board Vias for Proper Electrical and Thermal RF Circuit Grounding.
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