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| 型号： | MT28C64416W18AFW-F606TWT |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| 封装： | FBGA-77 |
| 文件页数： | 1/13页 |
| 文件大小： | 177K |
| 代理商： | MT28C64416W18AFW-F606TWT |
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS
ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
THIS DATA SHEET CONTAINS THE PRESENT DESCRIPTION OF A PRODUCT IN
DEFINITION WITH NO FORMAL DESIGN IN PROGRESS.
09005aef80c9c807
MT28C64432W18A.fm - Rev. E Pub 2/04 EN
1
2004 Micron Technology, Inc. All rights reserved.
64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH
16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM
PRELIMINARY
FLASH AND CellularRAM
COMBO MEMORY
MT28C64416W18/W30A (PREVIEW)
MT28C64432W18/W30A
MT28C64464W18/W30A
Low Voltage, Wireless Temperature
Features
Stacked die Combo package
Includes one 64Mb Flash device
Choice of either 16Mb, 32Mb, or 64Mb Cellular-
RAM device
Basic configuration
Flash
Flexible multibank architecture
4 Meg x 16 Async/Page/Burst interface
Support for true concurrent operations with no
latency
CellularRAM
Low-power, high-density design
1 Meg x 16, 2 Meg x 16, or 4 Meg x 16 configurations
Async/Page
F_VCC, VCCQ, F_VPP, C_VCC voltages
1.70V (MIN)/1.95V (MAX) F_VCC, C_VCC
1.70V (MIN)/2.24V (MAX) VCCQ (W18)
2.20V (MIN)/3.30V(MAX) VCCQ (W30)
1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) F_VPP tolerant (factory programming
compatibility)
Fast programming Algorithm (FPA)
Enhanced suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
Flash device contains two 64-bit chip protection registers
for security purposes
100,000 ERASE cycles per block
Cross-compatible command set support
Extended command set
Common Flash interface (CFI) compliant
Manufacturer’s Identification Code (ManID)
Micron
Intel
MT28C64416W18/W30A
is
preview
status.
The
MT28C64432W18/W30A and MT28C64464W18/W30A are
preliminary status.
Options
Flash Timing
60ns1 (W18)
70ns (W18/W30)
Flash Burst Frequency
66 MHz1 (W18)
54 MHz (W18/W30)
Flash Boot Block Configuration
Top
Bottom
CellularRAM Timing
70ns
85ns
I/O Voltage Range
VccQ 1.70V–2.24V (W18)
VccQ 2.20V–3.30V (W30)
Manufacturer’s Identification Code (ManID)
Micron (0x2Ch)
Intel (0x89h)
Operating Temperature Range
Wireless Temperature (-25°C to +85°C)
Package
77-ball (Standard) FBGA 8 x 10 grid
77-ball (Lead-free) FBGA 8 x 10 grid2
NOTE:
1. Contact factory for availability.
2. Contact factory for details.
A
B
C
D
E
F
G
H
J
K
1
2
3
4
5
6
7
8
Top View
(Ball Down)
C_VSS
F_VPP
F_WP#
F_RST#
DQ10
DQ3
DQ11
NC
F_VCC
A19
C_UB#
DQ2
DQ1
DQ9
NC
VCCQ
A4
A5
A3
A2
A1
A0
C_OE#
NC
F_CE#
C_VSS
F_VCC
F_CLK
C_CE#
A20
A8
DQ13
DQ14
DQ6
F_VCC
VSSQ
A11
A12
A13
A15
A16
NC
VCCQ
C_ZZ#
C_VSS
F_VCC
NC
C_WE#
F_ADV#
F_WE#
DQ5
DQ12
DQ4
C_VCC
C_VSS
A18
C_LB#
A17
A7
A6
DQ8
DQ0
F_OE#
NC
VSSQ
NC
A9
A10
A14
F_WAIT#
DQ7
DQ15
VCCQ
F_VSS
A21
Figure 1: 77-Ball FBGA
NOTE:
Balls B6, D5, and F7 are only used for Flash burst operation.
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