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参数资料
| 型号： | MT3S03AFS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40 mA, 5 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1E1A, FSM, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 134K |
| 代理商： | MT3S03AFS |
MT3S03AFS
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S03AFS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator/Buffer Applications
Superior performance in oscillator and Buffer applications
Superior noise characteristics
: NF = 1.7 dB, |S21e|
2 = 5.5 dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector- base voltage
VCBO
10
V
Collector- emitter voltage
VCEO
5
V
Emitter- base voltage
VEBO
2
V
Collector current
IC
40
mA
Base current
IB
10
mW
Collector power dissipation
PC(Note 1)
85
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1:
10 mm
2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
Unit: mm
1.Base
2.Emitter
3.Collector
JEDEC
―
JEITA
―
Toshiba
2-1E1A
Weight: 0.0006 g (typ.)
2
1
3
0 0
fSM
0.
2±
0.
05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.1
5±0.0
5
0.
35
±0
.05
0.
6±0.0
5
1
2
0.1±0.05
0.4
8
+0
.0
2
-0.
04
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PDF描述 |
|---|---|
| MT3S03T | RF SMALL SIGNAL TRANSISTOR |
| MT3S04AFS | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT3S04AT | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT3S04AT | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT3S03AS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AT_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S03AU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S04AFS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
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