参数资料
型号: MT3S03AS
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: 2-2H1A, SSM, 3 PIN
文件页数: 1/3页
文件大小: 0K
代理商: MT3S03AS
MT3S03AS
2010-01-25
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S03AS
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.4dB (f = 2 GHz)
High gain: Gain = 8dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
2
V
Collector current
IC
40
mA
Base current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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