参数资料
型号: MT3S06T
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: 2-1B1A, 3 PIN
文件页数: 1/5页
文件大小: 255K
代理商: MT3S06T
MT3S06T
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06T
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz)
High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Base current
IC
15
mA
Collector current
IB
7
mA
Collector power dissipation
PC
60
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
相关PDF资料
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MT3S07FS UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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