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参数资料
| 型号： | MT3S06T |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1B1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 270K |
| 代理商： | MT3S06T |
MT3S06T
2003-08-08
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06T
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz)
High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Base current
IC
15
mA
Collector current
IB
7
mA
Collector power dissipation
PC
60
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Marking
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 3 V, IC = 5 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
8.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
6.5
9.5
dB
NF (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.7
3
Noise figure
NF (2)
VCE = 3 V, IC = 3 mA, f = 2 GHz
1.6
3
dB
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note)
0.25
0.7
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
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相关代理商/技术参数 |
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|---|---|
| MT3S06T(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 5V 0.015A 3-Pin TESM T/R |
| MT3S06U | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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| MT3S07T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
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