参数资料
型号: MT3S12FS
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: FSM, 2-1E1A, 3 PIN
文件页数: 1/3页
文件大小: 147K
代理商: MT3S12FS
MT3S12FS
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S12FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
Superior performance in oscillator applications
Superior noise characteristics
:NF = 1.7 dB, |S21e|
2 = 4.5 dB (f =2GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector- base voltage
VCBO
13
V
Collector- emitter voltage
VCEO
6
V
Emitter- base voltage
VEBO
1.5
V
Collector current
IC
40
mA
Base current
IB
10
mW
Collector power dissipation
PC(Note)
85
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: 10 mm
2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
JEDEC
JEITA
TOSHIBA
2-1E1A
Weight: 0.0006g (typ.)
0 9
1
2
3
0.
0.
05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.1
5±0.0
5
0.
35
±0
.05
0.
6±0.0
5
1
2
0.1±0.05
0.4
8
+0
.0
2
-0.
04
1.BASE
2.EMITTER
3.COLLECOTR
Unit : mm
fSM
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相关代理商/技术参数
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