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参数资料
| 型号： | MT3S19 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | S-MINI, 2-3F1A, SC-59, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 171K |
| 代理商： | MT3S19 |
MT3S19
2009-03-31
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE=5 V,IC=50 mA
10
12
GHz
|S21e|
2(1)
VCE=5 V,IC=50 mA,f=500 MHz
18
Insertion gain
|S21e|
2(2)
VCE=5 V,IC=50 mA,f=1 GHz
10.5
12.5
dB
Noise figure
NF
VCE=5 V,IC=20 mA,f=1 GHz
1.5
1.9
dB
3
rd order intermodulation distortion output
intercept point
OIP3
VCE=5 V,IC=50 mA,f=500 MHz,
⊿
f=1 MHz
29.5
33.5
dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB=6 V,IE=0 mA
100
nA
Emitter cut-off current
IEBO
VEB=1 V,IC=0 mA
100
nA
DC current gain
hFE
VCE=5 V,IC=50 mA
100
160
250
Reverse transfer capacitance
Cre
VCB=5 V,IE=0 mA, f=1 MHz (Note 3)
0.7
0.95
pF
Note 3: Cre is measured using a 3-terminal method with capacitance bridge
Caution:
This device is sensitive to electrostatic discharge.
Please make tool and equipment earthed enough when you handle.
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相关代理商/技术参数 |
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|---|---|
| MT3S19R | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S19TU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Low-Noise, Low-Distortion Amplifier Applications |
| MT3S20P | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S20TU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S21P | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Low-Noise, Low-Distortion Amplifier Application |
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