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参数资料
| 型号： | MT3S19R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SOT23F, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 161K |
| 代理商： | MT3S19R |
MT3S19R
2010-08-18
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Transition frequency
fT
VCE=5V,IC=50mA
11.5
13.5
GHz
|S21e|
2(1)
VCE=5V,IC=50mA,f=500MHz
18.5
Insertion gain
|S21e|
2(2)
VCE=5V,IC=50mA,f=1GHz
11
13
dB
Noise figure
NF
VCE=5V,IC=20mA,f=1GHz
1.5
1.9
dB
3
rd order intermodulation distortion output
intercept point
OIP3
VCE=5V,IC=50mA,f=500MHz,
Δf=1MHz
29.5
33.5
dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB=6V,IE=0
100
nA
Emitter cut-off current
IEBO
VEB=1V,IC=0
100
nA
DC current gain
hFE
VCE=5V,IC=50mA
100
250
Reverse transfer capacitance
Cre
VCB=5V,IE=0, f=1MHz (Note3)
0.75
1
pF
Note 3: Cre is measured using a 3-terminal method with capacitance bridge
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT3S19TU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Low-Noise, Low-Distortion Amplifier Applications |
| MT3S20P | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S20TU | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S21P | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Low-Noise, Low-Distortion Amplifier Application |
| MT3S22P | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
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