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参数资料
| 型号： | MT3S20TU |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | UFM, 2-2U1B, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 188K |
| 代理商： | MT3S20TU |
MT3S20TU
2009-12-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S20TU
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
FEATURES
Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz)
High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
80
mA
Base current
IB
10
mA
Collector power dissipation
PC(Note1)
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note.1 : The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit
: mm
UFM
JEDEC
-
JEITA
-
TOSHIBA
2-2U1B
Weight: 6.6mg (typ.)
-0
.0
5
1.7±0.1
2.1±0.1
0.
65±
0.
05
1
2
2.
0±
0.
1
3
0.7±0.
05
+0
.1
0.
3
0.
16
6±
0.
05
1.BASE
2.EMITTER
3.COLLECTOR
M U
1
2
3
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