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参数资料
| 型号： | MT3S35T |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1B1A, TESM, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 117K |
| 代理商： | MT3S35T |
MT3S35T
2
2002-08-19
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=3V, IC=10mA, f=2GHz
16
20
-
GHz
|S21e|
2(1)
VCE=3V, IC=10mA, f=1GHz
16
18
-
dB
Insertion Gain
|S21e|
2(2)
VCE=3V, IC=10mA, f=2GHz
11
13
-
dB
NF(1)
VCE=3V, IC=2mA, f=1GHz
-
1.1
-
dB
Noise Figure
NF(2)
VCE=3V, IC=2mA, f=2GHz
-
1.4
1.9
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=8V, IE=0
-
1
A
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
1
A
DC Current Gain
hFE
VCE=3V, IC=10mA
70
-
140
-
Output Capacitance
Cob
VCB=1V, IE=0, f=1MHz
-
0.46
0.75
pF
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.21
0.4
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT3S35T_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
| MT3S36FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF Low-Noise Amplifier Application |
| MT3S36T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
| MT3S37FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF Low-Noise Amplifier Application |
| MT3S37T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
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