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参数资料
| 型号： | MT3S37T |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1B1A, TESM, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 118K |
| 代理商： | MT3S37T |
MT3S37T
2
2002-08-19
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=3V, IC=20mA, f=2GHz
15
19
-
GHz
|S21e|
2(1)
VCE=3V, IC=20mA, f=1GHz
15
17
-
dB
Insertion Gain
|S21e|
2(2)
VCE=3V, IC=20mA, f=2GHz
10
12
-
dB
NF(1)
VCE=3V, IC=3mA, f=1GHz
-
0.9
-
dB
Noise Figure
NF(2)
VCE=3V, IC=3mA, f=2GHz
-
1.2
1.8
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=8V, IE=0
-
1
A
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
1
A
DC Current Gain
hFE
VCE=3V, IC=20mA
70
-
140
-
Output Capacitance
Cob
VCB=1V, IE=0, f=1MHz
-
0.66
1.0
pF
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.35
0.65
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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