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参数资料
| 型号： | MT3S41FS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | FSM, 2-1E1A, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 121K |
| 代理商： | MT3S41FS |
MT3S41FS
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 3 V, IC = 20 mA, f = 2 GHz
11
15
-
GHz
|S21e|
2 (1)
VCE = 3 V, IC = 20 mA, f = 1 GHz
13.5
15.5
-
dB
Insertion gain
|S21e|
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
8
10
-
dB
NF (1)
VCE = 3 V, IC = 5 mA, f = 1 GHz
-
0.8
-
dB
Noise figure
NF (2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
-
1.2
1.8
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 8 V, IE = 0
-
1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
-
1
A
DC current gain
hFE
VCE = 3 V, IC = 20 mA
70
-
140
-
Output capacitance
Cob
VCB = 1 V, IE = 0, f = 1 MHz
-
0.72
1.10
pF
Reverse transistor capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz (Note
1)
-
0.46
0.85
pF
Note 1:
Cre is measured using a three-terminal method with a capacitance bridge.
Note 2:
This product is a lead-free article.
Caution: This device is sensitive to electrostatic discharge. Be sure to provide all tools and equipment with
adequate grounding.
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相关代理商/技术参数 |
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|---|---|
| MT3S41FS_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF Low-Noise Amplifier Application |
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| MT3S41T_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
| MT3S45T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION |
| MT3S46T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION |
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