参数资料
型号: MT42L64M64D2KH-3 IT:A
厂商: Micron Technology Inc
文件页数: 6/164页
文件大小: 0K
描述: IC DDR2 SDRAM 2GBIT 216FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 4G(64M x 64)
速度: 333MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 216-WFBGA
供应商设备封装: 216-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Features
List of Figures
Figure 1: 2Gb LPDDR2 Part Numbering ............................................................................................................ 3
Figure 2: Typical Self-Refresh Current vs. Temperature .................................................................................... 15
Figure 3: Single Rank, Single Channel Package Block Diagram ......................................................................... 16
Figure 4: Dual Rank, Single Channel Package Block Diagram ........................................................................... 17
Figure 5: Single Rank, Dual Channel Package Block Diagram ........................................................................... 18
Figure 6: Dual Rank, Single Channel (3 Die) Package Block Diagram ................................................................ 19
Figure 7: Dual Rank, Dual Channel Package Block Diagram ............................................................................ 20
Figure 8: Dual Rank, Dual Channel (3 Die) Package Block Diagram .................................................................. 21
Figure 9: Dual Rank, Single Channel (4 Die) Package Block Diagram ................................................................ 22
Figure 10: 134-Ball FBGA – 11mm x 11.5mm (Package Code MH) .................................................................... 23
Figure 11: 134-Ball FBGA – 11.5mm x 11.5mm (Package Code MG) .................................................................. 24
Figure 12: 168-Ball FBGA – 12mm x 12mm (Package Code KL) ......................................................................... 25
Figure 13: 168-Ball FBGA – 12mm x 12mm (Package Code KP) ......................................................................... 26
Figure 14: 168-Ball FBGA – 12mm x 12mm (Package Code LE) ......................................................................... 27
Figure 15: 216-Ball FBGA – 12mm x 12mm (Package Code KH) ........................................................................ 28
Figure 16: 216-Ball FBGA – 12mm x 12mm (Package Code KJ) ......................................................................... 29
Figure 17: 216-Ball FBGA – 12mm x 12mm (Package Code KU) ........................................................................ 30
Figure 18: 220-Ball FBGA – 14mm x 14mm (Package Code MP) ........................................................................ 31
Figure 19: 220-Ball FBGA – 14mm x 14mm (Package Code LD) ........................................................................ 32
Figure 20: 134-Ball FBGA (x16, x32) ................................................................................................................ 33
Figure 21: 168-Ball FBGA – 12mm x 12mm Single- and Dual-Die Package (SDP, DDP) ...................................... 34
Figure 22: 168-Ball FBGA – 12mm x 12mm Triple- and Quad-Die Package (3DP, QDP) ...................................... 35
Figure 23: 216-Ball 2-Channel FBGA – 12mm x 12mm ..................................................................................... 36
Figure 24: 220-Ball 2-Channel FBGA – 14mm x 14mm ..................................................................................... 37
Figure 25: Functional Block Diagram ............................................................................................................. 39
Figure 26: Voltage Ramp and Initialization Sequence ...................................................................................... 42
Figure 27: ACTIVATE Command .................................................................................................................... 54
Figure 28: t FAW Timing (8-Bank Devices) ....................................................................................................... 55
Figure 29: READ Output Timing – t DQSCK (MAX) ........................................................................................... 56
Figure 30: READ Output Timing – t DQSCK (MIN) ........................................................................................... 56
Figure 31: Burst READ – RL = 5, BL = 4, t DQSCK > t CK ..................................................................................... 57
Figure 32: Burst READ – RL = 3, BL = 8, t DQSCK < t CK ..................................................................................... 57
Figure 33: t DQSCKDL Timing ........................................................................................................................ 58
Figure 34: t DQSCKDM Timing ....................................................................................................................... 59
Figure 35: t DQSCKDS Timing ......................................................................................................................... 60
Figure 36: Burst READ Followed by Burst WRITE – RL = 3, WL = 1, BL = 4 ......................................................... 61
Figure 37: Seamless Burst READ – RL = 3, BL = 4, t CCD = 2 .............................................................................. 61
Figure 38: READ Burst Interrupt Example – RL = 3, BL = 8, t CCD = 2 ................................................................. 62
Figure 39: Data Input (WRITE) Timing ........................................................................................................... 63
Figure 40: Burst WRITE – WL = 1, BL = 4 ......................................................................................................... 63
Figure 41: Burst WRITE Followed by Burst READ – RL = 3, WL = 1, BL = 4 ......................................................... 64
Figure 42: Seamless Burst WRITE – WL = 1, BL = 4, t CCD = 2 ............................................................................ 64
Figure 43: WRITE Burst Interrupt Timing – WL = 1, BL = 8, t CCD = 2 ................................................................ 65
Figure 44: Burst WRITE Truncated by BST – WL = 1, BL = 16 ............................................................................ 66
Figure 45: Burst READ Truncated by BST – RL = 3, BL = 16 ............................................................................... 67
Figure 46: Data Mask Timing ......................................................................................................................... 67
Figure 47: Write Data Mask – Second Data Bit Masked .................................................................................... 68
Figure 48: READ Burst Followed by PRECHARGE – RL = 3, BL = 8, RU( t RTP(MIN)/ t CK) = 2 ................................ 69
Figure 49: READ Burst Followed by PRECHARGE – RL = 3, BL = 4, RU( t RTP(MIN)/ t CK) = 3 ................................ 70
Figure 50: WRITE Burst Followed by PRECHARGE – WL = 1, BL = 4 .................................................................. 71
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
6
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