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参数资料
| 型号： | MT4S07U |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2K1A, USQ, 4 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 215K |
| 代理商： | MT4S07U |
MT4S07U
2005-08-05
2
Microwave Characteristics (Ta
= 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 3 V, IC = 10 mA
10
12
GHz
|S21e|
2
(1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
8
Insertion gain
|S21e|
2
(2)
VCE = 3 V, IC = 15 mA, f = 2 GHz
7.5
10.5
dB
NF(1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.6
3
Noise figure
NF(2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
1.5
3
dB
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz (Note)
0.4
0.85
pF
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
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相关代理商/技术参数 |
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| MT4S100T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
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