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参数资料
| 型号： | MT4S100T |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | TESQ, 4 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 99K |
| 代理商： | MT4S100T |
MT4S100T
1
2003-11-13
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S100T
UHF Low Noise Amplifier Application
FEATURES
Low Noise Figure :NF=0.72dB (@f=2GHz)
High Gain:|S21e|2=17.0dB (@f=2GHz)
Marking
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
6
V
Collector-Emitter voltage
VCEO
3
V
Emitter-Base voltage
VEBO
1.2
V
Collector-Current
IC
15
mA
Base-Current
IB
7
mA
Collector Power dissipation
PC
45
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Unit:mm
1.2±0.05
0.9±0.05
1.
2±
0.
05
0.
8±
0.
05
0.
12±
0.
05
1
2
3
4
1.
BASE
2.
EMITTER
3.
COLLECTOR
4.
EMITTER
TESQ
0.
2±
0.
05
0.
52±
0.
05
P
6
JEDEC
―
JEITA
―
TOSHIBA
2-1G1B
Weight: 0.0015 g
P
6
2
1
3
4
相关PDF资料 |
PDF描述 |
|---|---|
| MT4S100T | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT4S100U | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT4S100U | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT4S101U | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT4S101U | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT4S100T_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF Low Noise Amplifier Application |
| MT4S100U | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
| MT4S101T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF Low Noise Amplifier Application |
| MT4S101T_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF Low Noise Amplifier Application |
| MT4S102T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF-SHF Low Noise Amplifier Application |
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