- 您现在的位置：买卖IC网 > PDF目录97628 > MT6L57AFS 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MT6L57AFS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1F1A, FS6, 6 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 110K |
| 代理商： | MT6L57AFS |
MT6L57AFS
2007-11-01
2
Electrical Characteristics Q1 (Ta
= 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Reverse transfer capacitance
Cre(Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.25
0.5
pF
Transition frequency
fT
VCE = 3 V, IC = 5 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
8.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
7
9.5
dB
Noise figure
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.7
3
dB
Electrical Characteristics Q2 (Ta
= 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
160
Reverse transfer capacitance
Cre(Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.8
1.05
pF
Transition frequency
fT
VCE = 3 V, IC = 7 mA
5
7
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
9.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
10.5
13
dB
Noise figure
NF
VCE = 1 V, IC = 5 mA, f = 1 GHz
1.3
2.2
dB
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
相关PDF资料 |
PDF描述 |
|---|---|
| MT6L57AFS | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT6L61AS | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT6L62AE | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MTB29N15E | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB29N15ET4 | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT6L57AT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| MT6L58AE | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT6L58AE_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT6L58AFS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
| MT6L61AT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
发布紧急采购，3分钟左右您将得到回复。