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参数资料
| 型号： | MT6L61AE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2N1C, 6 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 123K |
| 代理商： | MT6L61AE |
MT6L61AE
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L61AE
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
2
V
Collector current
IC
25
40
mA
Base current
IB
10
mA
Collector power dissipation
PC
(Note1)
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Total power dissipation of Q1 and Q2
Q1
Q2
Three pin SSM type part No.
MT3S07S
MT3S04AS
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
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相关代理商/技术参数 |
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| MT6L61AT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
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