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参数资料
| 型号： | MT6L62AE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2N1C, 6 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 71K |
| 代理商： | MT6L62AE |
MT6L62AE
2002-01-18
2
Electrical Characteristics Q1-Side (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Transition frequency
fT
VCE = 3 V, IC = 10 mA
10
12
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
7
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 15 mA, f = 2 GHz
6.5
8.5
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.6
3
Noise figure
NF (2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
1.5
3
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note2)
0.45
0.85
pF
Electrical Characteristics Q2-Side (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
160
fT (1)
VCE = 1 V, IC = 5 mA
5
7
Transition frequency
fT (2)
VCE = 3 V, IC = 10 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
3
6.5
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.7
3
Noise figure
NF (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
1.4
2.2
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note2)
0.8
1.15
pF
Note2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
Pin Assignment (top view)
Caution
This device electrostatic sensitivity. Please handle with caution.
T F
4
6
3
1
2
5
B1
B2
C1
E1
C2
Q1
Q2
E2
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