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参数资料
| 型号： | MT6L73FS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-1F1A, FS6, 6 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 36K |
| 代理商： | MT6L73FS |
MT6L73FS
2005-06-13
2
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)
CHARACTERISTICS
SYMBOL
C O N D I T I O N
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
1
A
DC Current Gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Reverse Transfer Capacitance
Cre (Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.4
0.65
pF
Transition Frequency
fT
VCE = 3 V, IC = 10 mA
10
12
GHz
S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz
8
Insertion Gain
S21e2 (2) VCE = 3 V, IC = 15 mA, f = 2 GHz
7.5
10
dB
Noise Figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.5
3
dB
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)
CHARACTERISTICS
SYMBOL
C O N D I T I O N
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.5
A
DC Current Gain
hFE
VCE = 1 V, IC = 5 mA
75
125
Reverse Transfer Capacitance
Cre (Note)
VCB = 1 V, IE = 0, f = 1 MHz
0.75
1
pF
Transition Frequency
fT
VCE = 1 V, IC = 10 mA
5
7
GHz
S21e2 (1) VCE = 1 V, IC = 10 mA, f = 2 GHz
6.5
Insertion Gain
S21e2 (2) VCE = 3 V, IC = 20 mA, f = 2 GHz
6.5
8
dB
Noise Figure
NF
VCE = 1 V, IC = 15mA, f = 2 GHz
1.35
2
dB
Note : Cre is measured by 3 terminal method capacitance bridge.
Caution
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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