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参数资料
| 型号： | MTB10N60E7 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 181K |
| 代理商： | MTB10N60E7 |
MTB10N60E7
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
4.5 V
5.5 V
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation
with Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
8
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2
20
ID, DRAIN CURRENT (AMPS)
0
–25
–50
TJ, JUNCTION TEMPERATURE (°C)
1.75
0.75
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0
10,000
100
10
1
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
24
6
24
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
25
100
200
I DSS
,LEAKAGE
(nA)
20
0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
18
20
,D
RAIN–T
O–
S
OURCE
RE
S
IS
TANCE
(OHM
S)
DS(on)
ID, DRAIN CURRENT (AMPS)
0.75
0.55
0.50
0.45
0.40
R
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
TJ = 100°C
–55
°C
25
°C
TJ = 25°C
4
8
10
14
12
16
10
7
35
2.5
5
17.5
10
12
14
0.2
1.6
0.90
0.80
TJ = 25°C
VGS = 10 V
4 V
TJ = 100°C
25
°C
–55
°C
VGS = 10 V
15 V
VGS = 10 V
ID = 5 A
VDS ≥ 10 V
TJ = 125°C
100
°C
25
°C
6
75
100
125
6
12
16
14
18
8 V
6 V
5 V
24
7.5
10
12.5
15
6
8
018
16
0.4
0.6
0.8
1
1.2
1.4
20
2
4
10
12
68
016
18
14
150
0.25
0.50
1.50
1.00
1.25
2.50
2.00
2.25
300
400
600
1000
VGS = 0 V
0.70
0.65
0.60
0.85
500
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