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参数资料
| 型号： | MTB16N25E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-02, D2PAK-3 |
| 文件页数： | 8/11页 |
| 文件大小： | 274K |
| 代理商： | MTB16N25E |
MTB16N25E
http://onsemi.com
6
DRAINTOSOURCE DIODE CHARACTERISTICS
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
RG, GATE RESISTANCE (OHMS)
110
1
100
1
t,TIME
(ns)
tf
td(off)
td(on)
200
V GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
150
100
50
0
12
0
QT, TOTAL CHARGE (nC)
VDS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
9
6
3
10
20
30
60
VDS
VGS
40
0
Q1
Q2
QT
Q3
10
tr
VDD = 250 V
ID = 16 A
VGS = 10 V
TJ = 25°C
ID = 16 A
TJ = 25°C
1000
0.5
0.6
0.7
0.8
0.9
0
4
16
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
I S
,SOURCE
CURRENT
(AMPS)
VGS = 0 V
TJ = 25°C
12
8
0.55
0.65
0.75
0.85
50
0.95
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with
an increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as
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| MTB16N25ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MTB1-6PAL79 | 制造商:ITT Interconnect Solutions 功能描述: 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
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