- 您现在的位置：买卖IC网 > PDF目录98045 > MTB3N120E (ON SEMICONDUCTOR) 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB3N120E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/12页 |
| 文件大小： | 322K |
| 代理商： | MTB3N120E |
MTB3N120E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
10,000
1,000
100
10
1
0
400
600
1000
1200
100
°C
25
°C
2.5
2.0
1.5
1.0
0.5
0
– 50
– 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 1.5 A
5.4
5.0
4.6
4.2
3.8
ID, DRAIN CURRENT (AMPS)
15 V
8
2
0
2
4
6
5
3
1
6
0
6
12
18
24
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
– 55
°C
TJ = 25°C
VGS = 10 V
VGS = 0 V
5
4
3
2
3
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
0
2
4
6
5
3
1
TJ = 125°C
1
6
4
200
25
°C
TJ = – 55°C
100
°C
25
°C
4 V
5 V
6 V
VGS = 10 V
TJ = 25°C
6
0
5
4
3
2
1
800
VGS = 10 V
相关PDF资料 |
PDF描述 |
|---|---|
| MTB40N10E | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB40N10ET4 | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB50N06VLT4 | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB50N06VL | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB50P03HDLT4 | 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB3N120ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R |
| MTB3N60E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB3N60ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB406N | 功能描述:拨动开关 4PDT TOGGLE SWITCH Decorat Bat Actuator RoHS:否 制造商:C&K Components 触点形式:DPDT 开关功能:ON - ON - ON 电流额定值: 电压额定值 AC:20 V 电压额定值 DC:20 V 功率额定值:0.4 VA 端接类型:V-Bracket 安装风格: 端子密封:Epoxy 触点电镀:Gold 照明:Not Illuminated |
| MTB40N10E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK Rail |
发布紧急采购，3分钟左右您将得到回复。