- 您现在的位置：买卖IC网 > PDF目录96091 > MTB50N06V (ON SEMICONDUCTOR) 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB50N06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-04, D2PAK-3 |
| 文件页数： | 6/7页 |
| 文件大小： | 207K |
| 代理商： | MTB50N06V |
MTB50N06V
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
ATION
(W
ATTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
10
1000
1
0
400
240
160
320
100
10 μs
100 μs
1ms
10ms
dc
80
ID = 42 A
1
0.1
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
175
相关PDF资料 |
PDF描述 |
|---|---|
| MTB50N06VT4 | 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB55N06ZT4 | 55 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB55N10EL | 55 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB55N10ELT4 | 55 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N10E7L | 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB50N06VL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK Rail |
| MTB50N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R |
| MTB50N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R |
| MTB50P03HDL | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB50P03HDLG | 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。