参数资料
型号: MTB50P03HDLT4
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
文件页数: 10/12页
文件大小: 182K
代理商: MTB50P03HDLT4
MTB50P03HDL
7
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
t, TIME (s)
Figure 14. Thermal Response
1.0E–05
1.0
0.01
0.1
0.2
0.02
0.01
SINGLE PULSE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 16. D2PAK Power Derating Curve
0.1
D = 0.5
0.05
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈ 450 mils x 350 mils
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
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