- 您现在的位置：买卖IC网 > PDF目录98045 > MTB52N06VLT4 (ON SEMICONDUCTOR) 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB52N06VLT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 115K |
| 代理商： | MTB52N06VLT4 |
MTB52N06VL
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
25
50
75
100
125
10
VGS = 15 V
SINGLE PULSE
TC = 25°C
150
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P D
,POWER
DISSIP
ATION
(W
ATTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈ 450 mils x 350 mils
10
1000
1
0
450
250
150
350
100
10 s
100 s
1ms
10ms
dc
50
ID = 52 A
175
400
200
100
300
t, TIME (s)
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1
0.1
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
相关PDF资料 |
PDF描述 |
|---|---|
| MTB52N06VL | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VLT4G | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VT4 | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N05HDT4 | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N05HD | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB52N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 52A 3-Pin(2+Tab) D2PAK T/R |
| MTB55N03N3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:30V N-Channel Logic Level Enhancement Mode MOSFET |
| MTB55N06Z | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB55N06ZT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB55N10Q8 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:N -Channel Logic Level Enhancement Mode Power MOSFET |
发布紧急采购，3分钟左右您将得到回复。