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参数资料
| 型号： | MTB55N06Z |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MTB55N06Z |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MTB55N06Z/D
MTB55N06Z
Preferred Device
Power MOSFET
55 Amps, 60 Volts
N–Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche mode and switch efficiently. This high energy device also
offers a drain–to–source diode with fast recovery time. Designed for
high voltage, high speed switching applications in power supplies,
PWM motor controls and other inductive loads, the avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated Temperature
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Low Stored Gate Charge for Efficient Switching
Internal Source–to–Drain Diode Designed to Replace External Zener
Transient Suppressor–Absorbs High Energy in the Avalanche Mode
ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
– Continuous @ TC = 25°C
– Continuous @ TC = 100°C
– Single Pulse (tp ≤ 10 s)
ID
IDM
55
35.5
165
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C
(Note NO TAG)
PD
113
0.91
2.5
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VDS = 60 Vdc,
VGS = 10 Vdc, Peak IL = 55 Apk,
L = 0.3 mH, RG = 25 )
EAS
454
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient
– Junction to Ambient (Note NO TAG)
R
θJC
R
θJC
R
θJA
1.1
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
MARKING DIAGRAM
& PIN ASSIGNMENT
MTB55N06Z
YWW
1
Gate
4
Drain
2
Drain
3
Source
55 AMPERES
60 VOLTS
RDS(on) = 18 m
Device
Package
Shipping
ORDERING INFORMATION
MTB55N06Z
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
N–Channel
D
S
G
MTB55N06Z
= Device Code
Y
= Year
WW
= Work Week
MTB55N06ZT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
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