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参数资料
| 型号： | MTD1312 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 186K |
| 代理商： | MTD1312 |
MTD1312
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
5.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
10
VGS, GATE–TO–SOURCE (VOLTS)
0
–25
–50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
020
1.0E–07
1.0E–08
1.0E–09
1.0E–10
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
2.0
4.0
6.0
0
2.0
3.0
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
25
10
30
I DSS
,LEAKAGE
(AMPS)
40
2.5
0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
2.0
4.0
40
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
40
0
ID, DRAIN CURRENT (AMPS)
0.020
0.010
0.005
0
R
10
20
30
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
TJ = 25°C
15
20
25
30
35
1.0
3.0
9.0
8.0
10
7.0
3.0
3.5
20
15
5.0
25
1.0
4.0
5.0
0.02
0.10
0.015
TJ = 25°C
VGS = 2.7 V
3.3 V
TJ = 125°C
25
°C
–55
°C
ID = 10 A
TJ = 25°C
10 V
VGS = 4.5 V
ID = 10 A
VGS = 10 V
VDS ≥ 10 V
TJ = 125°C
100
°C
25
°C
6.0 V
10 V
75
100
150
125
3.7 V
4.5 V
30
35
1.5
1.0
0.04
0.06
0.08
6.0
7.0
8.0
9.0
0.5
VGS = 0 V
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