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参数资料
| 型号： | MTD1P40ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 126K |
| 代理商： | MTD1P40ET4 |
MTD1P40E
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
400
453
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.6
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc)
RDS(on)
6.0
8.0
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
VDS(on)
9.6
8.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
gFS
0.5
1.2
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
355
500
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
56
110
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
16
20
SWITCHING CHARACTERISTICS (Note 3.)
TurnOn Delay Time
td(on)
15.4
30
ns
Rise Time
(VDD = 200 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
12
20
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
24
50
Fall Time
RG 9.1 )
tf
20
40
Gate Charge
QT
12
20
nC
(VDS = 320 Vdc, ID = 1.0 Adc,
Q1
2.0
(VDS
320 Vdc, ID
1.0 Adc,
VGS = 10 Vdc)
Q2
6.0
Q3
4.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
2.5
4.5
4.0
Vdc
Reverse Recovery Time
trr
175
ns
(I =10Adc V
= 0 Vdc
ta
125
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
52
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
1.2
C
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
相关PDF资料 |
PDF描述 |
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| MTD1P40E | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
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