参数资料
型号: MTD20P06HDLT4G
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, CASE 369C-01, DPAK-3
文件页数: 1/8页
文件大小: 86K
代理商: MTD20P06HDLT4G
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 6
1
Publication Order Number:
MTD20P06HDL/D
MTD20P06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic
Level
PChannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
lowvoltage, highspeed switching applications in power supplies,
converters and PWM motor controls, and other inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
Features
Ultra Low RDS(on), HighCell Density, HDTMOS
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
PbFree Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
GateSource Voltage
Continuous
NonRepetitive (tpv10 ms)
VGS
VGSM
"15
"20
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°C
Single Pulse (tpv10 ms)
ID
IDM
15
9.0
45
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C (Note 2)
PD
72
0.58
1.75
W
W/
°C
W
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 15 Apk, L = 2.7 mH, RG = 25 W)
EAS
300
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RqJA
1.73
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. inch pad size.
D
S
G
20 AMPERES, 60 VOLTS
RDS(on) = 175 mW
Device
Package
Shipping
ORDERING INFORMATION
MTD20P06HDL
DPAK
75 Units/Rail
PChannel
MTD20P06HDLT4
DPAK
2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MTD20P06HDLT4G
DPAK
(PbFree)
2500 Tape & Reel
MARKING DIAGRAM & PIN ASSIGNMENTS
20P06HL = Device Code
Y
= Year
WW
= Work Week
G
= PbFree Package
Gate 1
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1 2
3
4
YWW
06HLG
Drain 2
Source 3
20P
相关PDF资料
PDF描述
MTD20P06HDLG 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD20P06HDLT4 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD2955E 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD2955V 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
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