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| 型号： | MTD5P06VT4GV |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC PFET 60V5A 450MO DPAK |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 510pF @ 25V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
MTD5P06V
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?Source Breakdown Voltage
V (BR)DSS
Vdc
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
I DSS
60
?
?
?
?
61.2
?
?
?
?
10
100
mV/ ° C
m Adc
Gate?Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
I GSS
?
?
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain?Source On?Resistance (V GS = 10 Vdc, I D = 2.5 Adc)
V GS(th)
R DS(on)
2.0
?
?
2.8
4.7
0.34
4.0
?
0.45
Vdc
mV/ ° C
W
Drain?Source On?Voltage
V DS(on)
Vdc
(V GS = 10 Vdc, I D = 5 Adc)
(V GS = 10 Vdc, I D = 2.5 Adc, T J = 150 ° C)
Forward Transconductance
(V DS = 15 Vdc, I D = 2.5 Adc)
g FS
?
?
1.5
?
?
3.6
2.7
2.6
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
367
510
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
140
29
200
60
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(on)
?
11
20
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 5 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
26
17
19
50
30
40
Gate Charge
(See Figure 8)
(V DS = 48 Vdc, I D = 5 Adc, V GS = 10 Vdc)
Q T
Q 1
Q 2
?
?
?
12
3.0
5.0
20
?
?
nC
Q 3
?
5.0
?
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 5 Adc, V GS = 0 Vdc)
(I S = 5 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 5 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.72
1.34
97
73
24
0.42
3.5
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
4.5
7.5
?
?
nH
nH
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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