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参数资料
| 型号： | MTD6P10ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 206K |
| 代理商： | MTD6P10ET4 |
MTD6P10E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
124
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ±15 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.9
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
0.56
0.66
W
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125°C)
VDS(on)
3.6
4.8
4.2
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
1.5
3.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
550
840
pF
Output Capacitance
Coss
154
240
Reverse Transfer Capacitance
Crss
27
56
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 50 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc, RG = 9.1 W)
td(on)
12
25
ns
Rise Time
tr
29
60
TurnOff Delay Time
td(off)
18
40
Fall Time
tf
9
20
Gate Charge (See Figure 8)
(VDS = 80 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
QT
15.3
22
nC
Q1
4.1
Q2
7.1
Q3
6.8
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
1.8
1.5
5.0
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
112
ns
ta
92
tb
20
Reverse Recovery Stored Charge
QRR
0.603
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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