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参数资料
| 型号： | MTD9N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 246K |
| 代理商： | MTD9N10E |
Semiconductor Components Industries, LLC, 2005
February, 2005 Rev. XXX
1
Publication Order Number:
MTD9N10E/D
MTD9N10E
Preferred Device
Power MOSFET
9 Amps, 100 Volts
NChannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
Replaces MTD6N10
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
9.0
5.0
27
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TA = 25°C, when
mounted to minimum recommended pad
size
PD
40
0.32
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 9.0 Apk, L = 1.0 mH, RG = 25 )
EAS
40
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient, when mounted
to minimum recommended pad size
RθJC
RθJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
PIN ASSIGNMENT
1
Gate
3
Source
2
Drain
4
Drain
9 AMPERES
100 VOLTS
RDS(on) = 250 m
Device
Package
Shipping
ORDERING INFORMATION
MTD9N10E
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
http://onsemi.com
NChannel
D
S
G
MTD9N10E1
DPAK
75 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
T9
= MOSFET
YWW
T9
N10E
MTD9N10ET4
DPAK
2500 Tape & Reel
1
2
3
4
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相关代理商/技术参数 |
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| MTD9N10E1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 100V 9A Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD9N10ET4 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTDA-009-FM | 制造商:WECO Electrical Connectors 功能描述:Interface Module; D-Sub; 9; 30-14 AWG; 3.5 A; 125 VAC; Female |
| MTDA-009-MM | 制造商:WECO Electrical Connectors 功能描述:Interface Module; D-Sub; 9; 30-14 AWG; 3.5 A; 125 VAC; Male |
| MTDA015MF | 制造商:WECO Electrical Connectors 功能描述:Interface Module; D-Sub; 15; 30-14 AWG; 3.5 A; 125 VAC; Female |
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