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参数资料
| 型号： | MTD9N10ET4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/10页 |
| 文件大小： | 257K |
| 代理商： | MTD9N10ET4 |
MTD9N10E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1.0
10
100
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
0.01
0
25
50
75
100
125
10
24
ID = 9 A
32
150
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100
s
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE
PULSE
TC = 25°C
1 ms
10 ms
1.0E–05
0.1
1.0
0.01
40
t, TIME (s)
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
dc
D = 0.5
10
s
16
8
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
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