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参数资料
| 型号： | MTM15624 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, MINI5-G1, 5 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 299K |
| 代理商： | MTM15624 |
Multi Chip Discrete
Publication date: November 2008
SJF00108AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM15624
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For switching circuits
Overview
MTM15624 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for switching circuits.
Features
Built-in schottky barrier diode: VR = 20 V, IF = 700 mA
Low on-resistance: Ron = 100 mW (VGS = –4.0 V)
Low short-circuit input capacitance (Common source): Ciss = 400 pF
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
FET
Drain-source surrender voltage
VDSS
–20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
–2.1
A
Peak drain current
IDP
–8
A
Channel temperature
Tch
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
SBD
Reverse voltage
VR
20
V
Forward current (Average)
IF(AV)
700
mA
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Overall Total power dissipation *
PD
600
mW
Note) *: Measuring on ceramic substrate at 40 mm × 38 mm × 0.1 mm
Absolute maximum rating without heat sink for PD is 300 mA
Package
Code
Mini5-G1
Pin Name
1: Cathode
4: Source
2: Drain
5: Anode
3: Gate
Marking Symbol: KL
Internal Connection
2
(D)
1
(K)
(A)
5
(S)
4
(G)
3
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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